丝瓜视频未满十八严禁下载_欧美乱妇高清无乱码._自拍 另类 综合 欧美小说_日本午夜免费电影_榴莲视频APP污版_777米奇影院狠狠色_久久av资源影音先锋_国产麻豆精品福利在线_欧美三级韩国三级少妇99_日韩一级特黄视频

CN EN
Home
About Us
Newpros
New 100V 3.2mΩ SGT MOSFET for PD power supply
New 100V 3.2mΩ SGT MOSFET for PD power supply Back
PDF

Introduction In recent years, the rapid popularity of various high-current charging protocols in the field of PD power supplies has made the FOM value of synchronous rectifier MOSFETs more stringent. Yangjie Technology launched advanced Copper Clip PDFN5060 package products YJG120G10AR/YJG120G10BR, reducing the packaging resistance of traditional PDFN5060 at the same time, reduce the package parasitic parameters, improve the heat dissipation capacity, to bring customers a better choice.
Features ? Using the SGT process, lower Rds (on) and Qg are obtained, resulting in lower FOM and reduced system losses in PD schemes
? Compared with traditional PDFN5060 package, Clip product has strong overcurrent capability, low thermal resistance, and a wider range of SOA to cope with various abnormal working conditions in PD power supply
SPECIFICATION

YJG120G10BR YJG120G10AR

Related new products

1200V 80 mΩ SIC MOSFET

TO-220AC Internal Insulated Package Series Ultra-Fast Recovery Diode

MMBZ Series ESD with Voltage Regulation Characteristics

120V SGT process N-channel MOSFET

N150V MOSFET for Industrial Control

New N40V SGT MOSFETs for Sweeper

DFN1006-3L Package Small Signal Device

JC

SGT N60V MOSFET for Clean Energy Field

MOSFET for High Power DC-DC